NTD85N02R-1G

new-10%

Manufacturer part number:NTD85N02R-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 24V 12A IPAK

Case Package:SOT-23

Datasheet:NTD85N02R-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	24V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	85A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.25W Ta 78.1W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2050pF @ 20V
Current - Continuous Drain (Id) @ 25°C	12A Ta 85A Tc
Gate Charge (Qg) (Max) @ Vgs	17.7nC @ 5V
Rise Time	77ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	85A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	12A
Drain-source On Resistance-Max	0.0052Ohm
Drain to Source Breakdown Voltage	24V
Pulsed Drain Current-Max (IDM)	192A
Avalanche Energy Rating (Eas)	85 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free