HGT1S12N60A4S9A

join

new-10%

Manufacturer part number:HGT1S12N60A4S9A

Manufacturer:ON Semiconductor

Description:HGT1S12N60A4S9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HGT1S12N60A4S9A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Reach Compliance Code	compliant
Base Part Number	HGT1S12N60
Input Type	Standard
Power - Max	167W
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	54A
Test Condition	390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Gate Charge	78nC
Current - Collector Pulsed (Icm)	96A
Td (on/off) @ 25°C	17ns/96ns
Switching Energy	55μJ (on), 50μJ (off)

HGT1S12N60A4S9A Description

The HGT1S12N60A4S9A is a 600V, SMPS Series N-Channel IGBT, MOS-gated high voltage switching device combining the best features of MOSFETs and bipolar transistors

HGT1S12N60A4S9A Features