HGTG11N120CND Description

The HGTG11N120CND is an NPT (Non-Punch Through) IGBT. The MOS gate high voltage switching IGBT family has a new member. IGBTs combine the greatest qualities of MOSFETs and bipolar transistors into a single device. This HGTG11N120CND has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. The IGBT used is the TA49291 development type. The development type TA49189 diode was employed. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT. Previously known as Developmental Type TA49303.

HGTG11N120CND Features

43 A, 1200 V, TC = 25°C

1200 V Switching SOA Capability

Typical Fall Time: 340 ns at TJ = 150°C

Short Circuit Rating

Low Conduction Loss

Thermal Impedance SPICE Model

This is Pb?Free Device

HGTG11N120CND Applications

Power Management

Industrial

DC-DC Conversion

Switch application