HGTG27N120BN

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Manufacturer part number:HGTG27N120BN

Manufacturer:ON Semiconductor

Description:HGTG27N120BN datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HGTG27N120BN Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	44 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS, AVALANCHE RATED
HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	500W
Current Rating	72A
Number of Elements	1
Element Configuration	Single
Power Dissipation	500W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	24 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	240 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	72A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.45V
Turn On Time	42 ns
Test Condition	960V, 27A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 27A
Continuous Collector Current	72A
Turn Off Time-Nom (toff)	360 ns
IGBT Type	NPT
Gate Charge	270nC
Current - Collector Pulsed (Icm)	216A
Td (on/off) @ 25°C	24ns/195ns
Switching Energy	2.2mJ (on), 2.3mJ (off)
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free