STGW39NC60VD

new-10%

Manufacturer part number:STGW39NC60VD

Manufacturer:STMicroelectronics

Description:STGW39NC60VD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW39NC60VD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	250W
Current Rating	40A
Base Part Number	STGW39
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	250W
Case Connection	ISOLATED
Input Type	Standard
Turn On Delay Time	33 ns
Transistor Application	POWER CONTROL
Rise Time	13ns
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	178 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Reverse Recovery Time	45ns
Continuous Drain Current (ID)	40A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	46 ns
Test Condition	390V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A
Turn Off Time-Nom (toff)	366 ns
Gate Charge	126nC
Current - Collector Pulsed (Icm)	220A
Td (on/off) @ 25°C	33ns/178ns
Switching Energy	333μJ (on), 537μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free