APT75GN60BG

new-10%

Manufacturer part number:APT75GN60BG

Manufacturer:Microsemi Corporation

Description:IGBT 600V 155A 536W TO247

Case Package:SOT-23

Datasheet:APT75GN60BG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	536W
Current Rating	155A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	47 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	385 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	155A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Turn On Time	95 ns
Test Condition	400V, 75A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 75A
Turn Off Time-Nom (toff)	485 ns
IGBT Type	Trench Field Stop
Gate Charge	485nC
Current - Collector Pulsed (Icm)	225A
Td (on/off) @ 25°C	47ns/385ns
Switching Energy	2500μJ (on), 2140μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free