STGP30H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGP30H60DF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
260W
Base Part Number
STGP30
Element Configuration
Single
Power Dissipation
260W
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
60A
Reverse Recovery Time
110 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.4V
Test Condition
400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
IGBT Type
Trench Field Stop
Gate Charge
105nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
50ns/160ns
Switching Energy
350μJ (on), 400μJ (off)
Gate-Emitter Voltage-Max
20V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.12000
$3.12
50
$2.68020
$134.01
100
$2.34940
$234.94
500
$2.02966
$1014.83
1,000
$1.74300
$1.743
2,500
$1.66950
$3.339
STGP30H60DF Product Details
STGP30H60DF Description
STGP30H60DF is an IGBT transistor in TO-220 package from STMicroelectronics. This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of high frequency converters. This device can be applied in Inverter, UPS, and PFC due to the following features. And its ideal operating temperature is between -40 and +175℃. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. STGP30H60DF Features
Ultrafast soft recovery antiparallel diode High speed switching Tight parameters distribution Safe paralleling Low thermal resistance Short circuit rated