STGB30H60DLLFBAG Description

The device STGB30H60DLLFBAG is a kind of IGBT developed using advanced proprietary trench gate field stop structure. The device is part of the new HB series IGBT and represents the best tradeoff between turn-on and switching loss to maximize the efficiency of any frequency converter. In addition, the micro-positive VCE (Sat) temperature coefficient and very tight parameter distribution make parallel operation safer.

STGB30H60DLLFBAG  Features

· AEC-Q101 qualified

· Maximum junction temperature: TJ = 175 °C

· Logic level gate drive

· High speed switching series

· Minimized tail current

· VCE(sat) = 1.7 V (typ.) @ IC = 30 A

· Low VF soft recovery co-packaged diode

· Tight parameters distribution

· Safer paralleling

· Low thermal resistance

STGB30H60DLLFBAG  Applications

· Ignition