IXXH60N65B4H1

new-10%

Manufacturer part number:IXXH60N65B4H1

Manufacturer:IXYS

Description:IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT

Case Package:SOT-23

Datasheet:IXXH60N65B4H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	GenX4™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	380W
Element Configuration	Single
Power Dissipation	380W
Input Type	Standard
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	116A
Reverse Recovery Time	150ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.7V
Test Condition	400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 60A
IGBT Type	PT
Gate Charge	95nC
Current - Collector Pulsed (Icm)	230A
Td (on/off) @ 25°C	37ns/145ns
Switching Energy	3.13mJ (on), 1.15mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant