IXGK82N120B3

new-10%

Manufacturer part number:IXGK82N120B3

Manufacturer:IXYS

Description:IGBT 1200V 230A 1250W TO264

Case Package:SOT-23

Datasheet:IXGK82N120B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.25kW
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	1250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.2V
Max Collector Current	230A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	112 ns
Test Condition	600V, 80A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 82A
Turn Off Time-Nom (toff)	760 ns
IGBT Type	PT
Gate Charge	350nC
Current - Collector Pulsed (Icm)	500A
Td (on/off) @ 25°C	30ns/210ns
Switching Energy	5mJ (on), 3.3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	180ns
RoHS Status	ROHS3 Compliant