FGH75T65UPD

new-10%

Manufacturer part number:FGH75T65UPD

Manufacturer:ON Semiconductor

Description:FGH75T65UPD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH75T65UPD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 6 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	375W
Rise Time-Max	56ns
Element Configuration	Single
Input Type	Standard
Power - Max	375W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	150A
Reverse Recovery Time	85 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	2.3V
Test Condition	400V, 75A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 75A
IGBT Type	Trench Field Stop
Gate Charge	385nC
Current - Collector Pulsed (Icm)	225A
Td (on/off) @ 25°C	32ns/166ns
Switching Energy	2.85mJ (on), 1.2mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7.5V
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant