HUF76419S3S

new-10%

Manufacturer part number:HUF76419S3S

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 29A D2PAK

Case Package:SOT-23

Datasheet:HUF76419S3S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	UltraFET™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	75W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 29A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	29A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Drain Current-Max (Abs) (ID)	29A
Drain-source On Resistance-Max	0.035Ohm
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	121 mJ
RoHS Status	RoHS Compliant