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IRFN214BTA_FP001

IRFN214BTA_FP001

IRFN214BTA_FP001

ON Semiconductor

MOSFET N-CH 250V 0.6A TO-92

SOT-23

IRFN214BTA_FP001 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.8W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V
Current - Continuous Drain (Id) @ 25°C 600mA Ta
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.265722 $0.265722
10 $0.250681 $2.50681
100 $0.236491 $23.6491
500 $0.223105 $111.5525
1000 $0.210477 $210.477

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