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SI4484EY-T1-GE3

SI4484EY-T1-GE3

SI4484EY-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 4.8A 8-SOIC

SOT-23

SI4484EY-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 506.605978mg
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Power Dissipation 1.8W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 34mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 4.8A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 4.8A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Drain to Source Resistance 34mOhm
Rds On Max 34 mΩ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.645464 $1.645464
10 $1.552324 $15.52324
100 $1.464456 $146.4456
500 $1.381563 $690.7815
1000 $1.303361 $1303.361

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