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2N5657

2N5657

2N5657

Rochester Electronics, LLC

2N5657 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N5657 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 20W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 10V @ 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 350V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 10MHz
Frequency - Transition 10MHz
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2N5657 Product Details

2N5657 Overview


This device has a DC current gain of 30 @ 100mA 10V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 10V @ 100mA, 500mA.10MHz is present in the transition frequency.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N5657 Features


the DC current gain for this device is 30 @ 100mA 10V
the vce saturation(Max) is 10V @ 100mA, 500mA
a transition frequency of 10MHz

2N5657 Applications


There are a lot of Rochester Electronics, LLC 2N5657 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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