KSA1156YSTSTU Overview

This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 1V @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.When collector current reaches its maximum, it can reach 500mA volts.

KSA1156YSTSTU Features

the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA

KSA1156YSTSTU Applications

There are a lot of ON Semiconductor KSA1156YSTSTU applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver