BUJ100LR,412 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJ100LR,412 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Base Part Number
BUJ100
Power - Max
2.1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 400mA 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 750mA
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
1A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.369120
$0.36912
10
$0.348226
$3.48226
100
$0.328515
$32.8515
500
$0.309920
$154.96
1000
$0.292378
$292.378
BUJ100LR,412 Product Details
BUJ100LR,412 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 400mA 5V DC current gain.A VCE saturation (Max) of 1.5V @ 250mA, 750mA means Ic has reached its maximum value(saturated).There is a 400V maximal voltage in the device due to collector-emitter breakdown.
BUJ100LR,412 Features
the DC current gain for this device is 10 @ 400mA 5V the vce saturation(Max) is 1.5V @ 250mA, 750mA
BUJ100LR,412 Applications
There are a lot of WeEn Semiconductors BUJ100LR,412 applications of single BJT transistors.