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BUJ100LR,412

BUJ100LR,412

BUJ100LR,412

WeEn Semiconductors

BUJ100LR,412 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ100LR,412 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Base Part Number BUJ100
Power - Max 2.1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 400mA 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 750mA
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 1A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.369120 $0.36912
10 $0.348226 $3.48226
100 $0.328515 $32.8515
500 $0.309920 $154.96
1000 $0.292378 $292.378
BUJ100LR,412 Product Details

BUJ100LR,412 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 400mA 5V DC current gain.A VCE saturation (Max) of 1.5V @ 250mA, 750mA means Ic has reached its maximum value(saturated).There is a 400V maximal voltage in the device due to collector-emitter breakdown.

BUJ100LR,412 Features


the DC current gain for this device is 10 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 250mA, 750mA

BUJ100LR,412 Applications


There are a lot of WeEn Semiconductors BUJ100LR,412 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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