BUJ105AB,118 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 13 @ 500mA 5V.A VCE saturation (Max) of 1V @ 800mA, 4A means Ic has reached its maximum value(saturated).A 400V maximal voltage - Collector Emitter Breakdown is present in the device.
BUJ105AB,118 Features
the DC current gain for this device is 13 @ 500mA 5V
the vce saturation(Max) is 1V @ 800mA, 4A
BUJ105AB,118 Applications
There are a lot of WeEn Semiconductors BUJ105AB,118 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
