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BUJ105AB,118

  • BUJ105AB,118
  • BUJ105AB,118

BUJ105AB,118

BUJ105AB,118

WeEn Semiconductors

BUJ105AB,118 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ105AB,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard IEC-134
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 125W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 13 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 4A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 8A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.261824 $1.261824
10 $1.190400 $11.904
100 $1.123019 $112.3019
500 $1.059452 $529.726
1000 $0.999483 $999.483
BUJ105AB,118 Product Details

BUJ105AB,118 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 13 @ 500mA 5V.A VCE saturation (Max) of 1V @ 800mA, 4A means Ic has reached its maximum value(saturated).A 400V maximal voltage - Collector Emitter Breakdown is present in the device.

BUJ105AB,118 Features


the DC current gain for this device is 13 @ 500mA 5V
the vce saturation(Max) is 1V @ 800mA, 4A

BUJ105AB,118 Applications


There are a lot of WeEn Semiconductors BUJ105AB,118 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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