ZTX1151A Overview

This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -180mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 240mV @ 250mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -3A to achieve high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 145MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

ZTX1151A Features

the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 240mV @ 250mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 145MHz

ZTX1151A Applications

There are a lot of Diodes Incorporated ZTX1151A applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter