KSA1182YMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA1182YMTF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 22 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-500mA
Frequency
200MHz
Base Part Number
KSA1182
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-100mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
-35V
Emitter Base Voltage (VEBO)
-5V
hFE Min
70
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.040691
$0.040691
500
$0.029920
$14.96
1000
$0.024933
$24.933
2000
$0.022875
$45.75
5000
$0.021378
$106.89
10000
$0.019887
$198.87
15000
$0.019233
$288.495
50000
$0.018911
$945.55
KSA1182YMTF Product Details
KSA1182YMTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -100mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.The part has a transition frequency of 200MHz.Breakdown input voltage is 30V volts.Collector current can be as low as 500mA volts at its maximum.
KSA1182YMTF Features
the DC current gain for this device is 120 @ 100mA 1V a collector emitter saturation voltage of -100mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at -5V the current rating of this device is -500mA a transition frequency of 200MHz
KSA1182YMTF Applications
There are a lot of ON Semiconductor KSA1182YMTF applications of single BJT transistors.