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KSA1381ES

KSA1381ES

KSA1381ES

ON Semiconductor

KSA1381ES datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA1381ES Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 7W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number KSA1381
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 7W
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -600mV
Collector Base Voltage (VCBO) -300V
Emitter Base Voltage (VEBO) -5V
hFE Min 40
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.376933 $0.376933
10 $0.355597 $3.55597
100 $0.335469 $33.5469
500 $0.316481 $158.2405
1000 $0.298567 $298.567
KSA1381ES Product Details

KSA1381ES Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 10V.With a collector emitter saturation voltage of -600mV, it offers maximum design flexibility.A VCE saturation (Max) of 600mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.There is a transition frequency of 150MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.

KSA1381ES Features


the DC current gain for this device is 100 @ 10mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz

KSA1381ES Applications


There are a lot of ON Semiconductor KSA1381ES applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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