BD238G Overview

This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 3MHz.During maximum operation, collector current can be as low as 2A volts.

BD238G Features

the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz

BD238G Applications

There are a lot of ON Semiconductor BD238G applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver