2STBN15D100T4 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 3A 3V DC current gain.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.3V @ 4mA, 4A.Emitter base voltages of 5V can achieve high levels of efficiency.Maximum collector currents can be below 12A volts.

2STBN15D100T4 Features

the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.3V @ 4mA, 4A
the emitter base voltage is kept at 5V

2STBN15D100T4 Applications

There are a lot of STMicroelectronics 2STBN15D100T4 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting