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KSA473YTSTU

KSA473YTSTU

KSA473YTSTU

ON Semiconductor

KSA473YTSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA473YTSTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C TJ
PackagingTube
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Base Part Number KSA473
Power - Max 10W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 100MHz
In-Stock:2808 items

KSA473YTSTU Product Details

KSA473YTSTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 2V.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Detection of Collector Emitter Breakdown at 30V maximal voltage is present.

KSA473YTSTU Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 800mV @ 200mA, 2A

KSA473YTSTU Applications


There are a lot of ON Semiconductor KSA473YTSTU applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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