KSA473YTSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA473YTSTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Reach Compliance Code
compliant
Base Part Number
KSA473
Power - Max
10W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
100MHz
KSA473YTSTU Product Details
KSA473YTSTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 2V.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
KSA473YTSTU Features
the DC current gain for this device is 120 @ 500mA 2V the vce saturation(Max) is 800mV @ 200mA, 2A
KSA473YTSTU Applications
There are a lot of ON Semiconductor KSA473YTSTU applications of single BJT transistors.