KSA733CGBU Overview

In this device, the DC current gain is 200 @ 1mA 6V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -180mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-150mA).Parts of this part have transition frequencies of 180MHz.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.

KSA733CGBU Features

the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 180MHz

KSA733CGBU Applications

There are a lot of ON Semiconductor KSA733CGBU applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting