NSV1C301ET4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 115mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 300mA, 3A.A 3A continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.The maximum collector current is 3A volts.
NSV1C301ET4G Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 250mV @ 300mA, 3A
the emitter base voltage is kept at 6V
NSV1C301ET4G Applications
There are a lot of ON Semiconductor NSV1C301ET4G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
