BU508AW Overview

In this device, the DC current gain is 10 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1.6A, 4.5A.An emitter's base voltage can be kept at 9V to gain high efficiency.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

BU508AW Features

the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V

BU508AW Applications

There are a lot of STMicroelectronics BU508AW applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting