KSA940H2 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA940H2 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSA940
Power - Max
1.5W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
1.5A
Frequency - Transition
4MHz
KSA940H2 Product Details
KSA940H2 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 50mA, 500mA.Product package TO-220-3 comes from the supplier.There is a 150V maximal voltage in the device due to collector-emitter breakdown.
KSA940H2 Features
the DC current gain for this device is 40 @ 500mA 10V the vce saturation(Max) is 1.5V @ 50mA, 500mA the supplier device package of TO-220-3
KSA940H2 Applications
There are a lot of ON Semiconductor KSA940H2 applications of single BJT transistors.