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KSA940H2

KSA940H2

KSA940H2

ON Semiconductor

KSA940H2 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA940H2 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSA940
Power - Max 1.5W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 1.5A
Frequency - Transition 4MHz
KSA940H2 Product Details

KSA940H2 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 50mA, 500mA.Product package TO-220-3 comes from the supplier.There is a 150V maximal voltage in the device due to collector-emitter breakdown.

KSA940H2 Features


the DC current gain for this device is 40 @ 500mA 10V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the supplier device package of TO-220-3

KSA940H2 Applications


There are a lot of ON Semiconductor KSA940H2 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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