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PHE13005X,127

PHE13005X,127

PHE13005X,127

WeEn Semiconductors

PHE13005X,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHE13005X,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 26W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 4A
Pricing & Ordering
Quantity Unit Price Ext. Price
PHE13005X,127 Product Details

PHE13005X,127 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 2A 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1A, 4A.Detection of Collector Emitter Breakdown at 400V maximal voltage is present.

PHE13005X,127 Features


the DC current gain for this device is 10 @ 2A 5V
the vce saturation(Max) is 1V @ 1A, 4A

PHE13005X,127 Applications


There are a lot of WeEn Semiconductors PHE13005X,127 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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