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PHE13005X,127

PHE13005X,127

PHE13005X,127

WeEn Semiconductors

PHE13005X,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHE13005X,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 26W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 4A
In-Stock:1757 items

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PHE13005X,127 Product Details

PHE13005X,127 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 2A 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1A, 4A.Detection of Collector Emitter Breakdown at 400V maximal voltage is present.

PHE13005X,127 Features


the DC current gain for this device is 10 @ 2A 5V
the vce saturation(Max) is 1V @ 1A, 4A

PHE13005X,127 Applications


There are a lot of WeEn Semiconductors PHE13005X,127 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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