PHE13005X,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
PHE13005X,127 Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
26W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 2A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
4A
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.24741
$0.49482
PHE13005X,127 Product Details
PHE13005X,127 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 2A 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1A, 4A.Detection of Collector Emitter Breakdown at 400V maximal voltage is present.
PHE13005X,127 Features
the DC current gain for this device is 10 @ 2A 5V the vce saturation(Max) is 1V @ 1A, 4A
PHE13005X,127 Applications
There are a lot of WeEn Semiconductors PHE13005X,127 applications of single BJT transistors.