PHE13005X,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
PHE13005X,127 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
26W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 2A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
4A
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PHE13005X,127 Product Details
PHE13005X,127 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 2A 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1A, 4A.Detection of Collector Emitter Breakdown at 400V maximal voltage is present.
PHE13005X,127 Features
the DC current gain for this device is 10 @ 2A 5V the vce saturation(Max) is 1V @ 1A, 4A
PHE13005X,127 Applications
There are a lot of WeEn Semiconductors PHE13005X,127 applications of single BJT transistors.