KSB1366YTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 2A.Keeping the emitter base voltage at -7V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
KSB1366YTU Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
KSB1366YTU Applications
There are a lot of ON Semiconductor KSB1366YTU applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
