KSB744YSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSB744YSTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Operating Temperature
150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-45V
Max Power Dissipation
1W
Current Rating
-3A
Frequency
45MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Gain Bandwidth Product
45MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 150mA, 1.5A
Collector Emitter Breakdown Voltage
45V
Collector Base Voltage (VCBO)
-70V
Emitter Base Voltage (VEBO)
-5V
hFE Min
60
RoHS Status
RoHS Compliant
Lead Free
Lead Free
KSB744YSTU Product Details
KSB744YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 500mA 5V.A VCE saturation (Max) of 2V @ 150mA, 1.5A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at -5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.Collector current can be as low as 3A volts at its maximum.
KSB744YSTU Features
the DC current gain for this device is 160 @ 500mA 5V the vce saturation(Max) is 2V @ 150mA, 1.5A the emitter base voltage is kept at -5V the current rating of this device is -3A
KSB744YSTU Applications
There are a lot of ON Semiconductor KSB744YSTU applications of single BJT transistors.