MJD44H11TF Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 50MHz.Input voltage breakdown is available at 80V volts.During maximum operation, collector current can be as low as 8A volts.

MJD44H11TF Features

the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz

MJD44H11TF Applications

There are a lot of ON Semiconductor MJD44H11TF applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver