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KSC1507O

KSC1507O

KSC1507O

ON Semiconductor

KSC1507O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC1507O Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC1507
Power - Max 15W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 10V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 200μA
Frequency - Transition 80MHz
In-Stock:1291 items

KSC1507O Product Details

KSC1507O Overview


DC current gain in this device equals 70 @ 10mA 10V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 5mA, 50mA.Product comes in the supplier's device package TO-220-3.Device displays Collector Emitter Breakdown (300V maximal voltage).

KSC1507O Features


the DC current gain for this device is 70 @ 10mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the supplier device package of TO-220-3

KSC1507O Applications


There are a lot of ON Semiconductor KSC1507O applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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