KSC1507O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC1507O Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSC1507
Power - Max
15W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA 10V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
200μA
Frequency - Transition
80MHz
KSC1507O Product Details
KSC1507O Overview
DC current gain in this device equals 70 @ 10mA 10V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 5mA, 50mA.Product comes in the supplier's device package TO-220-3.Device displays Collector Emitter Breakdown (300V maximal voltage).
KSC1507O Features
the DC current gain for this device is 70 @ 10mA 10V the vce saturation(Max) is 2V @ 5mA, 50mA the supplier device package of TO-220-3
KSC1507O Applications
There are a lot of ON Semiconductor KSC1507O applications of single BJT transistors.