KSC1845PBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 70mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 1mA, 10mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of 50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.When collector current reaches its maximum, it can reach 50mA volts.
KSC1845PBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
KSC1845PBU Applications
There are a lot of ON Semiconductor KSC1845PBU applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
