KSC2073H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC2073H1TU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSC2073
Power - Max
25W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
1.5A
Frequency - Transition
4MHz
KSC2073H1TU Product Details
KSC2073H1TU Overview
This device has a DC current gain of 40 @ 500mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier package TO-220-3 contains the product.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.
KSC2073H1TU Features
the DC current gain for this device is 40 @ 500mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA the supplier device package of TO-220-3
KSC2073H1TU Applications
There are a lot of ON Semiconductor KSC2073H1TU applications of single BJT transistors.