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KSC2073H1TU

KSC2073H1TU

KSC2073H1TU

ON Semiconductor

KSC2073H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC2073H1TU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC2073
Power - Max 25W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 1.5A
Frequency - Transition 4MHz
KSC2073H1TU Product Details

KSC2073H1TU Overview


This device has a DC current gain of 40 @ 500mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier package TO-220-3 contains the product.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.

KSC2073H1TU Features


the DC current gain for this device is 40 @ 500mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-220-3

KSC2073H1TU Applications


There are a lot of ON Semiconductor KSC2073H1TU applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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