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KSC3296YTU

KSC3296YTU

KSC3296YTU

ON Semiconductor

KSC3296YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC3296YTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 150V
Max Power Dissipation20W
Current Rating1.5A
Frequency 4MHz
Number of Elements 1
Element ConfigurationSingle
Power Dissipation20W
Case Connection ISOLATED
Transistor Application AMPLIFIER
Gain Bandwidth Product4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Collector Emitter Breakdown Voltage150V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage1.5V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2341 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.92000$0.92
10$0.82600$8.26
100$0.64900$64.9
500$0.54022$270.11

KSC3296YTU Product Details

KSC3296YTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 500mA 10V.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 4MHz in the part.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

KSC3296YTU Features


the DC current gain for this device is 40 @ 500mA 10V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 4MHz

KSC3296YTU Applications


There are a lot of ON Semiconductor KSC3296YTU applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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