KSD1691GSTU Overview
DC current gain in this device equals 200 @ 2A 1V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 200mA, 2A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.In extreme cases, the collector current can be as low as 5A volts.
KSD1691GSTU Features
the DC current gain for this device is 200 @ 2A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V
KSD1691GSTU Applications
There are a lot of ON Semiconductor KSD1691GSTU applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
