NJVMJD31T4G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 375mA, 3A.Continuous collector voltages should be kept at 3A to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A transition frequency of 3MHz is present in the part.During maximum operation, collector current can be as low as 3A volts.

NJVMJD31T4G Features

the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz

NJVMJD31T4G Applications

There are a lot of ON Semiconductor NJVMJD31T4G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter