TIP2955G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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TIP2955G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 15 hours ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Weight
45.359237kg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
90W
Peak Reflow Temperature (Cel)
260
Current Rating
-15A
Frequency
2.5MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
90W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
2.5MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
3V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
2.5MHz
Collector Emitter Saturation Voltage
1.1V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
hFE Min
20
Height
6.35m
Length
6.35m
Width
2.54m
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.454672
$0.454672
10
$0.428936
$4.28936
100
$0.404656
$40.4656
500
$0.381751
$190.8755
1000
$0.360143
$360.143
TIP2955G Product Details
TIP2955G Overview
In this device, the DC current gain is 20 @ 4A 4V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.1V ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3.3A, 10A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.This device has a current rating of -15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 2.5MHz.The maximum collector current is 15A volts.
TIP2955G Features
the DC current gain for this device is 20 @ 4A 4V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 3V @ 3.3A, 10A the emitter base voltage is kept at 7V the current rating of this device is -15A a transition frequency of 2.5MHz
TIP2955G Applications
There are a lot of ON Semiconductor TIP2955G applications of single BJT transistors.