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TIP2955G

TIP2955G

TIP2955G

ON Semiconductor

TIP2955G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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TIP2955G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Weight 45.359237kg
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 90W
Peak Reflow Temperature (Cel) 260
Current Rating -15A
Frequency 2.5MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 90W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 2.5MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 3V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 2.5MHz
Collector Emitter Saturation Voltage 1.1V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
Height 6.35m
Length 6.35m
Width 2.54m
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.454672 $0.454672
10 $0.428936 $4.28936
100 $0.404656 $40.4656
500 $0.381751 $190.8755
1000 $0.360143 $360.143
TIP2955G Product Details

TIP2955G Overview


In this device, the DC current gain is 20 @ 4A 4V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.1V ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3.3A, 10A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.This device has a current rating of -15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 2.5MHz.The maximum collector current is 15A volts.

TIP2955G Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.5MHz

TIP2955G Applications


There are a lot of ON Semiconductor TIP2955G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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