JANTX2N6299 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 4A 3V.A collector emitter saturation voltage of 2V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 16mA, 4A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.When collector current reaches its maximum, it can reach 500μA volts.

JANTX2N6299 Features

the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz

JANTX2N6299 Applications

There are a lot of Microsemi Corporation JANTX2N6299 applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver