KSD2058YTU Overview

DC current gain in this device equals 100 @ 500mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 7V, an efficient operation can be achieved.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In extreme cases, the collector current can be as low as 3A volts.

KSD2058YTU Features

the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 3A

KSD2058YTU Applications

There are a lot of ON Semiconductor KSD2058YTU applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting