MMBT3904T Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.There is a breakdown input voltage of 40V volts that it can take.Supplier package SOT-523F contains the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.The maximum collector current is 200mA volts.

MMBT3904T Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-523F

MMBT3904T Applications

There are a lot of ON Semiconductor MMBT3904T applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface