JAN2N2484 Overview
In this device, the DC current gain is 225 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 100μA, 1mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 50mA volts.
JAN2N2484 Features
the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
JAN2N2484 Applications
There are a lot of Microsemi Corporation JAN2N2484 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
