JAN2N2484 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N2484 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/376
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
360mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
360mW
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
225 @ 10mA 5V
Current - Collector Cutoff (Max)
2nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 100μA, 1mA
Collector Emitter Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N2484 Product Details
JAN2N2484 Overview
In this device, the DC current gain is 225 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 100μA, 1mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 50mA volts.
JAN2N2484 Features
the DC current gain for this device is 225 @ 10mA 5V the vce saturation(Max) is 300mV @ 100μA, 1mA the emitter base voltage is kept at 6V
JAN2N2484 Applications
There are a lot of Microsemi Corporation JAN2N2484 applications of single BJT transistors.