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KST13MTF

KST13MTF

KST13MTF

ON Semiconductor

KST13MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KST13MTF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature150°C
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation350mW
Terminal Position DUAL
Terminal FormGULL WING
Current Rating300mA
Base Part Number KST13
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage1.5V
Max Breakdown Voltage 30V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3463 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.039037$0.039037
500$0.028704$14.352
1000$0.023920$23.92
2000$0.021945$43.89
5000$0.020509$102.545
10000$0.019078$190.78
15000$0.018451$276.765
50000$0.018143$907.15

KST13MTF Product Details

KST13MTF Overview


In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 10V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 300mA.Parts of this part have transition frequencies of 125MHz.There is a breakdown input voltage of 30V volts that it can take.Maximum collector currents can be below 300mA volts.

KST13MTF Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz

KST13MTF Applications


There are a lot of ON Semiconductor KST13MTF applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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