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KSD5041PBU

KSD5041PBU

KSD5041PBU

ON Semiconductor

KSD5041PBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD5041PBU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD5041
Power - Max 750mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 3A
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 150MHz
KSD5041PBU Product Details

KSD5041PBU Overview


This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Product comes in the supplier's device package TO-92-3.The device has a 20V maximal voltage - Collector Emitter Breakdown.

KSD5041PBU Features


the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 3A
the supplier device package of TO-92-3

KSD5041PBU Applications


There are a lot of ON Semiconductor KSD5041PBU applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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