KSD5041PBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD5041PBU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSD5041
Power - Max
750mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 3A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
5A
Frequency - Transition
150MHz
KSD5041PBU Product Details
KSD5041PBU Overview
This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Product comes in the supplier's device package TO-92-3.The device has a 20V maximal voltage - Collector Emitter Breakdown.
KSD5041PBU Features
the DC current gain for this device is 180 @ 500mA 2V the vce saturation(Max) is 1V @ 100mA, 3A the supplier device package of TO-92-3
KSD5041PBU Applications
There are a lot of ON Semiconductor KSD5041PBU applications of single BJT transistors.