KSD5041QTA Overview

This device has a DC current gain of 230 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 150MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 5A volts can be achieved.

KSD5041QTA Features

the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz

KSD5041QTA Applications

There are a lot of ON Semiconductor KSD5041QTA applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface