KSD568RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD568RTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1.5W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 3A 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
7A
KSD568RTU Product Details
KSD568RTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 3A 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Supplier package TO-220-3 contains the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSD568RTU Features
the DC current gain for this device is 40 @ 3A 1V the vce saturation(Max) is 500mV @ 500mA, 5A the supplier device package of TO-220-3
KSD568RTU Applications
There are a lot of ON Semiconductor KSD568RTU applications of single BJT transistors.