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KSD568RTU

KSD568RTU

KSD568RTU

ON Semiconductor

KSD568RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD568RTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.5W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 3A 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 7A
KSD568RTU Product Details

KSD568RTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 3A 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Supplier package TO-220-3 contains the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

KSD568RTU Features


the DC current gain for this device is 40 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3

KSD568RTU Applications


There are a lot of ON Semiconductor KSD568RTU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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