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KSD73YTU

KSD73YTU

KSD73YTU

ON Semiconductor

KSD73YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD73YTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD73
Power - Max 30W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 10V
Current - Collector Cutoff (Max) 5mA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 20MHz
In-Stock:1264 items

KSD73YTU Product Details

KSD73YTU Overview


In this device, the DC current gain is 120 @ 1A 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 2V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Product package TO-220-3 comes from the supplier.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.

KSD73YTU Features


the DC current gain for this device is 120 @ 1A 10V
the vce saturation(Max) is 2V @ 500mA, 5A
the supplier device package of TO-220-3

KSD73YTU Applications


There are a lot of ON Semiconductor KSD73YTU applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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