KSD73YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD73YTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSD73
Power - Max
30W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1A 10V
Current - Collector Cutoff (Max)
5mA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
5A
Frequency - Transition
20MHz
KSD73YTU Product Details
KSD73YTU Overview
In this device, the DC current gain is 120 @ 1A 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 2V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Product package TO-220-3 comes from the supplier.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
KSD73YTU Features
the DC current gain for this device is 120 @ 1A 10V the vce saturation(Max) is 2V @ 500mA, 5A the supplier device package of TO-220-3
KSD73YTU Applications
There are a lot of ON Semiconductor KSD73YTU applications of single BJT transistors.