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KSD794AYS

KSD794AYS

KSD794AYS

ON Semiconductor

KSD794AYS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD794AYS Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Operating Temperature150°C TJ
PackagingBulk
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory Other Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Single
Power - Max 1W
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 150mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 60MHz
Power Dissipation-Max (Abs) 10W
In-Stock:3712 items

KSD794AYS Product Details

KSD794AYS Overview


In this device, the DC current gain is 160 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 150mA, 1.5A.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

KSD794AYS Features


the DC current gain for this device is 160 @ 500mA 5V
the vce saturation(Max) is 2V @ 150mA, 1.5A

KSD794AYS Applications


There are a lot of ON Semiconductor KSD794AYS applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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