KSD794AYS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD794AYS Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Single
Power - Max
1W
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 150mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
60MHz
Power Dissipation-Max (Abs)
10W
KSD794AYS Product Details
KSD794AYS Overview
In this device, the DC current gain is 160 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 150mA, 1.5A.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSD794AYS Features
the DC current gain for this device is 160 @ 500mA 5V the vce saturation(Max) is 2V @ 150mA, 1.5A
KSD794AYS Applications
There are a lot of ON Semiconductor KSD794AYS applications of single BJT transistors.