KSE3055TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSE3055TTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
60V
Max Power Dissipation
600mW
Current Rating
10A
Frequency
2MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
600mW
Gain Bandwidth Product
2MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
60V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.762907
$1.762907
10
$1.663120
$16.6312
100
$1.568981
$156.8981
500
$1.480171
$740.0855
1000
$1.396388
$1396.388
KSE3055TTU Product Details
KSE3055TTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.When VCE saturation is 8V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A maximum collector current of 10A volts is possible.
KSE3055TTU Features
the DC current gain for this device is 20 @ 4A 4V the vce saturation(Max) is 8V @ 3.3A, 10A the emitter base voltage is kept at 5V the current rating of this device is 10A
KSE3055TTU Applications
There are a lot of ON Semiconductor KSE3055TTU applications of single BJT transistors.